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• Изабран у звање доцент 2014. године на Електронском факултету у Нишу, област Микроелектроника и микросистеми
• Докторирао 2010. године на Електронском факултету у Нишу, област Микроелектроника
• Магистрирао 1996. године на Електронском факултету у Нишу, област Микроелектроника
• Дипломирао 1990. године на Електронском факултету у Нишу, област Микроелектроника

• Danković, I. Manić, V. Davidović, A. Prijić, M. Marjanović, A. Ilić, Z. Prijić, N. Stojadinović, “On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 522-531 (2016), ISSN 1530-4388, DOI: 10.1109/TDMR.2016.2598557, http://ieeexplore.ieee.org/document/7536114/
• Davidović, D. Danković, A. Ilić, I. Manić, S. Golubović, S. Djorić-Veljković, Z. Prijić, N. Stojadinović, “NBT and irradiation effects in negative bias temperature instability in p-channel power VDMOSFET”, IEEE Transaction on Nuclear Science, Vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866, http://ieeexplore.ieee.org/document/7454831/
• Danković, I. Manić, A. Prijić, S. Djorić-Veljković, V. Davidović, N. Stojadinović, Z. Prijić and S. Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, Vol. 30, no. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009,

 http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009

• Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Phyics, Vol. 47, pp. 6272-6276 (2008), ISSN 1347-4065 (online) 0021-4922 (print), DOI:10.1143/JJAP.47.6272, http://jjap.jsap.jp/link?JJAP/47/6272/
• Davidović, D. N. Kouvatsos, N. Stojadinović, A. T. Voutsas, “Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycristalline silicon thin film transistors”, Microelectronics Reliability, Vol. 47, pp. 1841-1845 (2007), DOI: 10.1016/j.microrel.2007.07.025            , https://www.academia.edu/15447562
• Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, “Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs”, Microelectronics Reliability, Vol. 47, pp. 1400-1405 (2007), DOI:10.1016/j.microrel.2007.07.022,

http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910.

• Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Effects of electrical stressing in power VDMOSFETs” Microelectronics Reliability, vol. 45, 2005, pp. 115-122 (2005), ISSN 0026-2714, DOI:10.1016/j.microrel.2004.09.002,

http://www.sciencedirect.com/science/article/pii/S0026271404003786

• N. Kouvatsos, V. Davidović, G.J. Papaioannou, N. Stojadinović, L. Michalas, M. Exarchos, A. T. Voutsas, D. Goustouridis, “Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors”, Microelectronics Reliability, Vol. 44, pp. 1631-1636 (2004), ISSN: 0026-2714, DOI: 10.1016/j.microrel.2004.07.082

http://www.sciencedirect.com/science/journal/00262714/44/9-11    .

• Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Radiation Hardening of Power VDMOSFETs Using Electrical Stress”, Electronics Letters, Vol. 38, pp. 431-432 (2002). ISSN: 0013-5194, DOI: 10.1049/el:20020281

http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=38

• Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Effects of burn-in stressing on radiation response of power VDMOSFETs”, Microelectronics Journal, Vol. 33, pp. 899-905 (2002), ISSN 0026-2692 DOI: 10.1016/S0026-2692(02)00121-0,

http://www.sciencedirect.com/science/article/pii/S0026269202001210

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