Контакт
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Академска каријера
- Изабранa у звање редовни професор 2006. године на Електронском факултету у Нишу, област Примењена физика
- Докторирала 1995. године на Електронском факултету у Нишу, област Техничке науке - Микроелектроника
- Магистрирала 1988. године на Електронском факултету у Нишу, област Техничке науке - Микроелектроника
- Дипломирала 1981. године на Филозофском факултету/ПМО група за физику у Нишу, област Природне науке - физика

Изабране референце
- S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technology & Radiation Protection, vol. 26, No. 1, pp. 18-24 (2011), ISSN 1451-3994, DOI: 10.2298/NTRP1101018D, http://ntrp.vinca.rs/2011_1/Djoric-Veljkovic2011_1.html
- I. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić and N. Stojadinović, “NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static under the static and pulsed NBT stress conditions”, Microelectronics Reliability, vol. 51, pp. 1540-1543 (2011), ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.06.004 http://www.sciencedirect.com/science/article/pii/S0026271411001946
- D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić and N. Stojadinović, “Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs”, Informacije MIDEM, Journal of Microlectronics, Electronic Components and Materials, vol. 43, no. 1, pp. 58-66 (2013), ISSN 0352-9045, UDK: 621.3:(53+54+621+66)(05)(497.1)=00, http://www.midem-drustvo.si/Journal%20papers/MIDEM_43%282013%291p58.pdf
- S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, “The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFET”, Nuclear Technology & Radiation Protection, vol. 28, No. 4, pp. 406-414 (2013), ISSN 1451-3994, UDC 621.039+614.876:504.06, DOI: 10.2298/NTRP1304406D, http://ntrp.vin.bg.ac.rs/2013_4/DjoricVeljkovic2013_4.htm
- S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović and N. Stojadinović, “Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors”, Japanese Journal of Applied Physics, vol. 54, no. 6, pp. 064101-1-064101-7 (2015), ISSN 1347-4065 (online) 0021-4922 (print) DOI:10.7567/JJAP.54.064101, http://iopscience.iop.org/article/10.7567/JJAP.54.064101/meta;jsessionid=DFF6F0F205410326914C50155654C1E1.c1.iopscience.cld.iop.org
- D. Danković, I. Manić, A. Prijić, S. Djorić-Veljković, V. Davidović, N. Stojadinović, Z. Prijić and S. Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, vol. 30, no. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009, http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009
- D. Danković, N. Stojadinović, Z. Prijić, I. Manić, V. Davidović, A. Prijić, S. Djorić-Veljković and S. Golubović,“ Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET”, Chinese Physics B, vol. 24, no. 10, pp. 106601-1-106601-9 (2015), ISSN 1674-1056, DOI: 10.1088/1674-1056/24/10/106601, http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601
- V. Davidović, D. Danković, A. Ilić, I. Manić, S. Golubović, S. Djorić-Veljković, Z. Prijić, N. Stojadinović, “NBT and irradiation effects in Negative bias temperature instability in p-channel power VDMOSFET ”, IEEE Transaction on Nuclear Science, vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866, http://ieeexplore.ieee.org/document/7454831/
- D. Danković, I. Manić, A. Prijić, V. Davidović, Z. Prijić, S. Golubović, S. Djorić-Veljković, A. Paskaleva, D. Spassov, N. Stojadinović, “A review of pulsed NBTI in P-channel power VDMOSFETs”, Microelectronics Reliability, vol. 82, pp. 28-36 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.01.003, https://www.sciencedirect.com/science/article/pii/S0026271418300039
- N. Stojadinović, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Stanković, A. Prijić, Z. Prijić, I. Manić, D. Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectronics Reliability, vol. 88-90, pp. 135-141 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.07.138
Активности
- Укупан број радова у часописима са IMPACT фактором: 46
- Тренутно учешће на пројектима Национални: 1; Интернационални: 1
- Остали релевантни подаци: Члан ИЕЕЕ, члан секретаријата Конференције МИЕЛ. Списак публикација: https://www.npao.ni.ac.rs/elektronski-fakultet/852-snezana-golubovic/852-snezana-golubovic