PhD Danijel Dankovic

Associate Professor

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Danijel Dankovic

Contact

  • e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
  • tel: 381 (18) 529-325

Academic carreer

  • Selected as Full Professor in 2023 at the Faculty of Electronic Engineering in Nis, in the field of Microelectronics and Microsystems
  • Received his PhD in 2009 at the Faculty of Electronic Engineering in Nis, in the field of Nanotechnology and Microsystems
  • Received his master’s degree in 2006 at the Faculty of Electronic Engineering in Nis, in the field of Microelectronics
  • Graduated in 2001 at the Faculty of Electronic Engineering in Nis, in the field of Electronics and Telecommunications
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Selected references

  • D. Danković, N. Mitrović, Z. Prijić, N. Stojadinović, “Modeling of NBTS Effects in P-Channel Power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 20, no. 1, pp. 204-213 (2020), ISSN 1530-4388, DOI: 10.1109/TDMR.2020.2974131, https://ieeexplore.ieee.org/document/8999737?source=authoralert
  • M. Djordjević, B. Jovičić, S. Marković, V. Paunović, D. Danković, “A smart data logger system based on sensor and Internet of Things technology as part of the smart faculty”, Journal of Ambient Intelligence and Smart Environments, vol. 12, no. 4, pp. 359-373 (2020), ISSN 1876-1364 (P), ISSN 1876-1372 (E), DOI: 10.3233/AIS-200569, https://content.iospress.com/journals/journal-of-ambient-intelligence-and-smart-environments/12/4
  • D. Danković, I. Manić, A. Prijić, V. Davidović, Z. Prijić, S. Golubović, S. Djorić-Veljković, A. Paskaleva, D. Spassov, N. Stojadinović, “A review of pulsed NBTI in P-channel power VDMOSFETs”, Microelectronics Reliability, vol. 82, pp. 28-36 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.01.003, https://www.sciencedirect.com/science/article/pii/S0026271418300039
  • N. Stojadinović, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Stanković, A. Prijić, Z. Prijić, I. Manić, D. Danković, “ NBTI and irradiation related degradation mechanisms in power VDMOS transistors”, Microelectronics Reliability, vol. 88-90, pp. 135-141 (2018), ISSN 0026-2714, DOI: 10.1016/j.microrel.2018.07.138, https://www.sciencedirect.com/science/article/pii/S0026271418307224
  • D. Danković, I. Manić, V. Davidović, A. Prijić, M. Marjanović, A. Ilić, Z. Prijić, N. Stojadinović, “ On the recoverable and permanent components of NBTI in p-channel power VDMOSFETs”, IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 522-531 (2016), ISSN 1530-4388, DOI: 10.1109/TDMR.2016.2598557, http://ieeexplore.ieee.org/document/7536114/
  • V. Davidović, D. Danković, A. Ilić, I. Manić, S. Golubović, S. Djorić-Veljković, Z. Prijić, N. Stojadinović, “NBT and irradiation effects in Negative bias temperature instability in p-channel power VDMOSFET ”, IEEE Transaction on Nuclear Science, vol. 63, no. 2, pp. 1268-1275 (2016), ISSN 0018-9499, DOI: 10.1109/TNS.2016.2533866, http://ieeexplore.ieee.org/document/7454831/
  • D. Danković, I. Manić, A. Prijić, S. Djorić-Veljković, V. Davidović, N. Stojadinović, Z. Prijić and S. Golubović, “Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation”, Semiconductor Science and Technology, vol. 30, no. 10, p. 105009 (9pp) (2015), ISSN 1361-6641, DOI: 10.1088/0268-1242/30/10/105009, http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009
  • D. Danković, N. Stojadinović, Z. Prijić, I. Manić, V. Davidović, A. Prijić, S. Djorić-Veljković and S. Golubović,“ Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET”, Chinese Physics B, vol. 24, no. 10, pp. 106601-1-106601-9 (2015), ISSN 1674-1056, DOI: 10.1088/1674-1056/24/10/106601, http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601
  • D. Danković, Lj. Vračar, A. Prijić, and Z. Prijić, “An Electromechanical Approach to a Printed Circuit Board Design Course”, IEEE Transaction on Education, vol. 56, no. 4, pp. 470-477 (2013), ISSN: 0018-9359, DOI: 10.1109/TE.2013.2257784, http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6507652
  • A. Prijić, D. Danković, Lj. Vračar, I. Manić, Z. Prijić and N. Stojadinović, “A method for negative bias instability (NBTI) measurements on power VDMOS transistors”, Measurement Science and Technology, vol.23, p. 8 (2012), ISSN 0957-0233 (Print), 1361-6501 (Online), DOI: 10.1088/0957-0233/23/8/085003, http://iopscience.iop.org/0957-0233/23/8/085003/

Activities

  • Total number of scientific papers with IMPACT factor: 35
  • Current involvement in projects: National: 4, International: 1
  • Other relevant information: Head of Department of Microelectronics. Assistant editor of international magazine Microelectronics Reliability (ELSEVIER). Member of the Executive Board of the IEEE Society of Serbia and Montenegro. President of the scientific conference of student papers IEEESTEC. List of publications: https://www.npao.ni.ac.rs/elektronski-fakultet/540-danijel-m-dankovic/540-danijel-m-dankovic

Contact

Address: Aleksandra Medvedeva 4, 18104 Niš, Serbia
Phone: +381 (18) 529-105
Fax: +381 (18) 588-399
E-mail: efinfo@elfak.ni.ac.rs

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