Sanja Aleksic

Contact

  • e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
  • tel: 381 (18) 529-403

Academic carreer

  • Selected as Assistant Professor in 2018 at the Faculty of Electronic Engineering in Nis, in the field of Microelectronics and Microsystems
  • Received her PhD in 2015 at the Faculty of Electronic Engineering in Nis, in the field of Applied Physics.
  • Received her master's degree in 2009 at the Faculty of Electronic Engineering in Nis, field of Applied Physics.
  • Graduated in 1995 from the Faculty of Philosophy in Nis, in the group for Physics, Department of General Physics
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Selected references

  • Dragana Markušev, Dragan Markušev, Sanja Aleksić, Dragan Pantić, Slobodanka Galović, D. M. Todorović, Jose Ordonez-Miranda, „ Experimental Photoacoustic observation of the Photogenerated Excess Carrier Influence on the Thermoelastic Response of n-type Silicon“, Journal of Applied Physics, vol. 128, no. 9, September 2020. https://doi.org/10.1063/5.0015657
  • N. Jovančić, D.K. Markushev, D.D. Markudhev, S.M. Aleksić, D.S. Pantić, D. Korte, M. Franko: "Thermal and Elastic Characterization of Nanostructured Fe2O3 Polymorphs and TiO2-Coated Fe2O3 Using Open Photoacoustic Cell", International Journal of Thermophysics (2020), DOI :10.1007/s10765-020-02669-w."
  • D.K. Markushev, D.D. Markudhev, S.M. Aleksić, D.S. Pantić, S. Galovic, D. Todorovic, J. Ordonez-Miranda: "Effects of the photogenerated excess carriers on the thermal and elastic properties of n-type silicon excited with a modulated light source: Theoretical analysis" Journal of Applied Physics, 126, 185102 (2019), DOI: 10.1063/1.5100837
  • Sanja Aleksić, Aleksandar Pantić, Dragan Pantić, “High electric field stress model of n-channel VDMOSFET based on artificial neural network”, Journal of Computational Electronics, pp. 1-10, April 2018. https://doi.org/10.1007/s10825-018-1167-z
  • Sanja Aleksić, Biljana Pešić, Dragan Pantić, “Simulation of semiconductor bulk trap influence on the electrical characteristics of the n-channel power VDMOS transistor”, Informacije MIDEM Journal of Microelectronics, Electronics Components and Materials, vol. 43, no. 2, pp. 124-130, 2013. (M23 – 0.277).
  • Sanja Aleksić, A. Jakšić, M. Pejović, „Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs“, Solid-State Electronics, Vol. 52, Issue 8, pp. 1197-1201, 2008.
  • Aleksandar Jakšić, Momčilo Pejović, Goran Ristić, Sanja Raković, ”Latent interface-trap generation in commercial power VDMOSFETs”, IEEE Trans. Nucl. Sci., Vol. 45, No. 3, pp. 1365-1371, 1998.
  • Sanja Aleksić, Dragana Markushev, Dragan Pantić, Mihajlo Rabasović, Dragan Markushev, Dragan Todorović, „Electro-acustic influence of the measuring system on the photoacoustic signal amplitude and phase in frequency domain“, Facta universitatis - series Physics Chemistry and Technology 14(1):9-20 · January 2016.
  • Dragana Markušev, Dragan Markušev, Sanja Aleksić, Dragan Pantić, Slobodanka Galović, D. M. Todorović, Jose Ordonez-Miranda, „ Experimental Photoacoustic observation of the Photogenerated Excess Carrier Influence on the Thermoelastic Response of n-type Silicon“, Journal of Applied Physics, vol. 128, no. 9, September 2020. https://doi.org/10.1063/5.0015657
  • Sanja Aleksić, Danijela Pantić, Dragan Pantić, „The Influence of Interface and Semiconductor Bulk Traps Generated Under HEFS on MOSFET`s Electrical Characteristics“, Proc. of 4th Small Sistem Simulation Symposium – SSSS 2014, Niš, Serbia, Februaru 2014.

Activities

  • Total number or scientific papers with IMPACT factor: 9
  • Current involvement in projects: National - , International –
  • Other relevant information:

Contact

Address: Aleksandra Medvedeva 14. 18104 Niš, Serbia
Phone: +381 (18) 529-105
Fax: +381 (18) 588-399
E-mail: efinfo@elfak.ni.ac.rs

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