Contact
- e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
- tel: 381 (18) 529-324
Academic carreer
- Selected as Associate Professor in 2021 at the Faculty of Electronic Engineering, Nis, Microelectronics and Microsystems
- Received his PhD in 2007 at the Faculty of Electronic Engineering in Nis, in the field of Microelectronics
- Received his master's degree in 2003 at the Faculty of Electronic Engineering in Nis, in the field of Microelectronics
- Graduated in 1999 from the Faculty of Electronic Engineering in Nis, in the field of Microelectronics
Selected references
- Milić M. Pejović, “Deffects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors”, Radiation Effects and Defects in Solids, Vol. 174, Issue 7/8, pp. 567-578, 2019, https://doi.org/10.1080/10420150.2019.1619735, M23.
- Čedomir I. Belić, Koviljka Đ. Stanković, Milić M. Pejović and Predrag V. Osmokrović, “The influence of the magnetic field on DC and the impulse breakdown of noble gases”, Materials, Vol. 12, pp. 752, 2019, https://doi.org/10.3390/ma12050752, M21.
- Milić M. Pejović, Momčilo M. Pejović and Koviljka Stanković, „Physico-Chemical processes induced by electrical breakdown and discharge responsible for memory effect in krypton with <10 ppm nitrogen”, Plasma Chemistry and Plasma Processing, Vol. 38, No. 2, pp. 415-428, 2018, Https://doi.org/10.10007/s11090-017-9870-2, M21.
- Milić M. Pejović, „Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift”, Radiation Physics and Chemistry, Vol. 130, pp. 221-228, 2017, http://dx.doi.org/10.1016/j.radphyschem 2016.08.027, M21.
- Milić M. Pejović, Dose response, radiation sensitivity and fading of p-channel MOSFETs (RADFETs) irradiated up to 50 Gy with 60Co“, Applied Radiation and Isotpoes, Vol. 104, pp. 100-105, 2015, http://dx.doi.org/10.1016/j.apradiso. 2015.06.024, M22.
- Milić M. Pejović, “Application of p-channel power VDMOSFET as a high radiation dose sensor”, IEEE Transaction on Nuclear Science, Vol. 62, No. 4, pp. 1905-1910, 2015, Doi 10.1109/TNS 2015.24 56211, http://www.ieee.org/publications-standards/publications/rights/index.html., M22.
- Milić M. Pejović, „The application of a small volume neon-filled tube in overvoltage protection“, IEEE Tranaction on Plasma Science, Vol. 43, No. 4, pp. 1063-1067, 2015, ISSN 0093-3813, M23.
- Milić M. Pejović, Nikola T. Nešić and Momčilo M. Pejović, „Kinetics of positive ions and electrically neutral active particles in afterglow in neon at low pressure“, Physics of Plasmas, American Institute of Physics, Vol. 21, 042111(8 pp), 2014, ISSN 1070-664X, M21, http://scitation.aip.org/content/aip/journal/pop/21/4/10.1063/1.4871485.
- Milić M. Pejović, Nikola T. Nešić and Momčilo M. Pejović, „Electrical breakdown time delay in nitrogen-filled tube with small inter electrode gap“, IEEE Transaction Dielectrics and Electrical Insulation, Institute of Electrical and Electronics Engineers, Inc., Vol. 21, No. 2, pp. 612-616, 2014, ISSN 1070-9878, M22, http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6783053&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel7%2F94%2F6783027%2F06783053.pdf%3Farnumber%3D6783053.
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Activities
- Total number or scientific papers with IMPACT factor: -
- Current involvement in projects: National: 1, International: -
- Other relevant information: 1. Breakthrough in gases at low pressures and some properties of semiconductor materials (2001-2005). 2. Pre-penetration and post-penetration processes in gases at low pressures and defects in semiconductor materials caused by ionizing radiation and electric field (2006-2010).