Војкан С. Давидовић

асистент

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vojkan-davidovic

Академска каријера

  • Изабран у звање асистент 2012. године на Електронском факултету у Нишу, област Микроелектроника
  • Докторирао 2010. године на Електронском факултету у Нишу, област Микроелектроника
  • Магистрирао 1996. године на Електронском факултету у Нишу, област Микроелектроника
  • Дипломирао 1990. године на Електронском факултету у Нишу, област Микроелектроника

Референце

  • S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, “Annealing of Radiation-Induced Defects in Burn-in Stressed Power VDMOSFETs”, Nuclear Technol. & Radiation Protection, Vol. 26, 2011, No. 1, pp. 18-24.
  • N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović and Z. Prijić, “Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress”, Microelectronics Reliability, Vol. 50, 2010, pp. 1278-1282.
  • V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Japanese Journal of Applied Phyics., 2008, Vol. 47, pp. 6272-6276.
  • V. Davidović, D. N. Kouvatsos, N. Stojadinović, A.T. Voutsas, “Influence of Polysilicon Film Thickness on Radiation Response of Advanced Excimer Laser Annealed Polycristalline Silicon Thin Film Transistors”, Microelectronics Reliability, Vol. 47, 2007, pp. 1841-1845.
  • D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, “Negative Bias Temperature Instabilities in Sequentially Stressed and Annealed P-Channel Power VDMOSFETs”, Microelectronics Reliability, Vol. 47, 2007, pp. 1400-1405.
  • N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Effects of Electrical Stressing in Power VDMOSFETs” Microelectronics Reliability, vol. 45, 2005, pp. 115-122 (invited paper).
  • D.N. Kouvatsos, V. Davidović, G.J. Papaioannou, N. Stojadinović, L. Michalas, M. Exarchos, A.T. Voutsas, D. Goustouridis, “Effects of Hot Carrier and Irradiation Stresses on Advanced Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistors”, Microelectronics Reliability, Vol. 44, 2004, pp. 1631-1636.
  • N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Effects of High Electric Field and Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs”, Microelectronics Reliability, Vol. 42, 2002, pp. 669-677.
  • N. Stojadinović, S. Golubović, V. Davidović, S. Djorić-Veljković and S. Dimitrijev, Modeling Radiation-Induced Mobility Degradation in MOSFETs”, Physica Status Solidi (a), Vol. 169, 1998, pp. 63-66.
  • N. Stojadinović, S. Djorić, S. Golubović, and V. Davidović, “Separation of the Irradiation Induced Gate Oxide Charge and Interface Traps Effects in Power VDMOSFETs”, Electronics Letters, Vol. 30, 1994, pp. 1992-1993.

Активности

  • Укупан број радова у часописима са IMPACT фактором: 24
  • Тренутно учешће на пројектима Национални: 2; Интернационални:
  • Остали релевантни подаци Учешће на међународним пројектима: 1) Performane characterization, stress degradation and reliability of Thin Film Transistors for investigation of defects in polycrystalline silicon films (National Center for Scientific Research “Demokritos”, Athens, Greece) 2) Constant voltage stress degradation of TaHfO-mixed oxides (Institute of Solid-State Physics, Bulgarian Academy of Sciences, Sofia, Bulgaria)

Koнтакт

Адреса: Александра Медведева 14, 18106 Ниш

Тел: +381 (18) 529-105

Факс: +381 (18) 588-399

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ПИБ: 100232259

Текући рачун: 840-1721666-89